DMP3056LSS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 7.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.26 EUR |
| 5000+ | 0.25 EUR |
| 7500+ | 0.24 EUR |
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Technische Details DMP3056LSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 7.1A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V.
Weitere Produktangebote DMP3056LSS-13 nach Preis ab 0.25 EUR bis 1.27 EUR
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DMP3056LSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 7.1A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V |
auf Bestellung 8724 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3056LSS-13 | Diodes Incorporated |
MOSFETs PMOS SINGLE P-CHANNL 30V 7.1A |
auf Bestellung 50676 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3056LSS-13 | Diodes INC. |
P-канальний ПТ, Udss, В = 30, Id = 7,1, Ptot, Вт = 2,5, Тип монт. = smd, Ciss, пФ @ Uds, В = 722 @ 25, Qg, нКл = 6,8 @ 4,5 В, Rds = 45 мОм @ 6 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 2,1 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: штAnzahl je Verpackung: 3000 Stücke |
verfügbar 3 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| DMP3056LSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 7.1A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V
Description: MOSFET P-CH 30V 7.1A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V
auf Bestellung 8724 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 26+ | 0.69 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.29 EUR |
| DMP3056LSS-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs PMOS SINGLE P-CHANNL 30V 7.1A
MOSFETs PMOS SINGLE P-CHANNL 30V 7.1A
auf Bestellung 50676 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.27 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 2500+ | 0.25 EUR |
| DMP3056LSS-13 |
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Hersteller: Diodes INC.
P-канальний ПТ, Udss, В = 30, Id = 7,1, Ptot, Вт = 2,5, Тип монт. = smd, Ciss, пФ @ Uds, В = 722 @ 25, Qg, нКл = 6,8 @ 4,5 В, Rds = 45 мОм @ 6 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 2,1 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
P-канальний ПТ, Udss, В = 30, Id = 7,1, Ptot, Вт = 2,5, Тип монт. = smd, Ciss, пФ @ Uds, В = 722 @ 25, Qg, нКл = 6,8 @ 4,5 В, Rds = 45 мОм @ 6 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 2,1 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 3 Stücke:


