DMP3056LSSQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
| Anzahl | Preis |
|---|---|
| 2500+ | 0.29 EUR |
| 5000+ | 0.26 EUR |
| 7500+ | 0.25 EUR |
| 12500+ | 0.24 EUR |
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Technische Details DMP3056LSSQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO.
Weitere Produktangebote DMP3056LSSQ-13 nach Preis ab 0.26 EUR bis 1.13 EUR
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DMP3056LSSQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K |
auf Bestellung 2366 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3056LSSQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 134796 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3056LSSQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K
auf Bestellung 2366 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.08 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
| 2500+ | 0.29 EUR |
| 5000+ | 0.26 EUR |
| DMP3056LSSQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 134796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.34 EUR |