DMP3056LSSQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.29 EUR |
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Technische Details DMP3056LSSQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP3056LSSQ-13 nach Preis ab 0.26 EUR bis 0.87 EUR
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DMP3056LSSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3056LSSQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V SO-8 T&R 2.5K |
auf Bestellung 2418 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3056LSSQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP3056LSSQ-13 - Leistungs-MOSFET, p-Kanal, 30 V, 4.9 A, 0.025 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm |
auf Bestellung 3439 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3056LSSQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP3056LSSQ-13 - Leistungs-MOSFET, p-Kanal, 30 V, 4.9 A, 0.025 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm |
auf Bestellung 3439 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3056LSSQ-13 | Hersteller : Diodes Zetex |
Single P-Channel Enhancement Mode Field Effect Transistor Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMP3056LSSQ-13 | Hersteller : Diodes Inc |
MOSFET BVDSS: 25V30V SO-8 T&R 2.5K |
Produkt ist nicht verfügbar |
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DMP3056LSSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.9A Pulsed drain current: -25A Power dissipation: 1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3056LSSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.9A Pulsed drain current: -25A Power dissipation: 1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |