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DMP3068LVT-13

DMP3068LVT-13 Diodes Incorporated

DMP3068LVT.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.8A TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.13 EUR
Mindestbestellmenge: 10000
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Technische Details DMP3068LVT-13 Diodes Incorporated

Description: MOSFET P-CH 30V 2.8A TSOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V.

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DMP3068LVT-13 DMP3068LVT-13 Hersteller : Diodes Incorporated diodes_inc_diod-s-a0006645032-1-1749367.pdf MOSFET MOSFET BVDSS: 25V-30V
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