DMP3085LSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 3.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
| Anzahl | Preis |
|---|---|
| 2500+ | 0.22 EUR |
| 5000+ | 0.2 EUR |
| 7500+ | 0.19 EUR |
| 12500+ | 0.18 EUR |
| 17500+ | 0.17 EUR |
| 25000+ | 0.16 EUR |
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Technische Details DMP3085LSD-13 Diodes Incorporated
Description: MOSFET 2P-CH 30V 3.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.9A, Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V, Rds On (Max) @ Id, Vgs: 70mOhm @ 5.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMP3085LSD-13 nach Preis ab 0.16 EUR bis 0.93 EUR
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DMP3085LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -30V Drain current: -3.1A On-state resistance: 70mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3085LSD-13 | Diodes Incorporated |
MOSFETs P-Ch ENH FET -30V 70mOhm -10V -3.9A |
auf Bestellung 235424 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3085LSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 3.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V Rds On (Max) @ Id, Vgs: 70mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 87866 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3085LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 205+ | 0.35 EUR |
| 208+ | 0.34 EUR |
| DMP3085LSD-13 |
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Hersteller: Diodes Incorporated
MOSFETs P-Ch ENH FET -30V 70mOhm -10V -3.9A
MOSFETs P-Ch ENH FET -30V 70mOhm -10V -3.9A
auf Bestellung 235424 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.77 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.18 EUR |
| 5000+ | 0.16 EUR |
| DMP3085LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 3.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 30V 3.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 87866 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |