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DMP3098LSS-13

DMP3098LSS-13 Diodes Incorporated


ds31265.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 5.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 336 pF @ 25 V
auf Bestellung 30000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.39 EUR
5000+ 0.37 EUR
12500+ 0.35 EUR
25000+ 0.34 EUR
Mindestbestellmenge: 2500
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Technische Details DMP3098LSS-13 Diodes Incorporated

Description: MOSFET P-CH 30V 5.3A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 5.3A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 336 pF @ 25 V.

Weitere Produktangebote DMP3098LSS-13 nach Preis ab 0.38 EUR bis 1.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMP3098LSS-13 DMP3098LSS-13 Hersteller : Diodes Incorporated ds31265.pdf Description: MOSFET P-CH 30V 5.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 336 pF @ 25 V
auf Bestellung 32470 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
26+ 1 EUR
100+ 0.7 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
DMP3098LSS-13 DMP3098LSS-13 Hersteller : Diodes Incorporated ds31265.pdf MOSFET PMOS SINGLE P-CHANNL 30V 5.3A
auf Bestellung 2180 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
44+1.21 EUR
51+ 1.03 EUR
100+ 0.75 EUR
500+ 0.6 EUR
1000+ 0.46 EUR
2500+ 0.38 EUR
Mindestbestellmenge: 44
DMP3098LSS-13 DMP3098LSS-13 Hersteller : Diodes Inc ds31265.pdf Trans MOSFET P-CH 30V 5.3A 8-Pin SOP T/R
Produkt ist nicht verfügbar
DMP3098LSS-13 DMP3098LSS-13 Hersteller : Diodes Zetex ds31265.pdf Trans MOSFET P-CH 30V 5.3A 8-Pin SOP T/R
Produkt ist nicht verfügbar
DMP3098LSS-13 DMP3098LSS-13 Hersteller : DIODES INCORPORATED ds31265.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.7A; Idm: -20A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -4.7A
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 7.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3098LSS-13 DMP3098LSS-13 Hersteller : DIODES INCORPORATED ds31265.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.7A; Idm: -20A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -4.7A
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 7.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar