DMP3099LQ-7 Diodes Incorporated

Description: MOSFET P-CH 30V 3.8A SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.09 EUR |
6000+ | 0.08 EUR |
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Technische Details DMP3099LQ-7 Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V, Power Dissipation (Max): 1.08W, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP3099LQ-7 nach Preis ab 0.08 EUR bis 0.54 EUR
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DMP3099LQ-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V Power Dissipation (Max): 1.08W Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6004 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3099LQ-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 104745 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3099LQ-7 | Hersteller : DIODES INC. |
![]() tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 1.08W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2530 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3099LQ-7 | Hersteller : DIODES INC. |
![]() tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 1.08W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2530 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3099LQ-7 | Hersteller : Diodes Inc |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3099LQ-7 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMP3099LQ-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11A; 1.08W; SOT23 Case: SOT23 Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 99mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.08W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -11A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3099LQ-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11A; 1.08W; SOT23 Case: SOT23 Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 99mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.08W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -11A Mounting: SMD |
Produkt ist nicht verfügbar |