DMP3105LVT-7 Diodes Incorporated
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Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.16 EUR |
15000+ | 0.15 EUR |
30000+ | 0.14 EUR |
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Technische Details DMP3105LVT-7 Diodes Incorporated
Description: MOSFET P-CH 30V 3.1A TSOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V, Power Dissipation (Max): 1.15W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V.
Weitere Produktangebote DMP3105LVT-7 nach Preis ab 0.14 EUR bis 0.79 EUR
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DMP3105LVT-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 4847 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3105LVT-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V |
auf Bestellung 41801 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3105LVT-7 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMP3105LVT-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.75W Mounting: SMD Case: TSOT26 Polarisation: unipolar Drain current: -3.1A Drain-source voltage: -30V Gate charge: 19.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Power dissipation: 1.75W Type of transistor: P-MOSFET On-state resistance: 0.15Ω Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3105LVT-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.75W Mounting: SMD Case: TSOT26 Polarisation: unipolar Drain current: -3.1A Drain-source voltage: -30V Gate charge: 19.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Power dissipation: 1.75W Type of transistor: P-MOSFET On-state resistance: 0.15Ω Kind of package: reel; tape |
Produkt ist nicht verfügbar |