DMP31D0UFB4-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 540MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 15 V
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.18 EUR |
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Technische Details DMP31D0UFB4-7B Diodes Incorporated
Description: MOSFET P-CH 30V 540MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 540mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V, Power Dissipation (Max): 460mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 15 V.
Weitere Produktangebote DMP31D0UFB4-7B nach Preis ab 0.15 EUR bis 0.93 EUR
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DMP31D0UFB4-7B | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K |
auf Bestellung 35734 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP31D0UFB4-7B | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 540MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Power Dissipation (Max): 460mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 15 V |
auf Bestellung 198307 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP31D0UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -540mA; Idm: -2A; 920mW Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Case: X2-DFN1006-3 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -2A Drain current: -0.54A Gate charge: 1.5nC Power dissipation: 920mW On-state resistance: 2Ω Gate-source voltage: ±8V Kind of channel: enhancement Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP31D0UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -540mA; Idm: -2A; 920mW Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Case: X2-DFN1006-3 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -2A Drain current: -0.54A Gate charge: 1.5nC Power dissipation: 920mW On-state resistance: 2Ω Gate-source voltage: ±8V Kind of channel: enhancement |
Produkt ist nicht verfügbar |