DMP31D0UFB4-7B Diodes Incorporated
auf Bestellung 35692 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.73 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.22 EUR |
| 5000+ | 0.19 EUR |
| 10000+ | 0.15 EUR |
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Technische Details DMP31D0UFB4-7B Diodes Incorporated
Description: MOSFET P-CH 30V 540MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 540mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V, Power Dissipation (Max): 460mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 15 V.
Weitere Produktangebote DMP31D0UFB4-7B nach Preis ab 0.19 EUR bis 0.92 EUR
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DMP31D0UFB4-7B | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 30V 540MA 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Power Dissipation (Max): 460mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 15 V |
auf Bestellung 17999 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP31D0UFB4-7B | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 540MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Power Dissipation (Max): 460mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 15 V |
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