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DMP31D0UFB4-7B

DMP31D0UFB4-7B Diodes Incorporated

DMP31D0UFB4.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 540MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 15 V
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.18 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP31D0UFB4-7B Diodes Incorporated

Description: MOSFET P-CH 30V 540MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 540mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V, Power Dissipation (Max): 460mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 15 V.

Weitere Produktangebote DMP31D0UFB4-7B nach Preis ab 0.17 EUR bis 0.93 EUR

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DMP31D0UFB4-7B DMP31D0UFB4-7B Hersteller : Diodes Incorporated DMP31D0UFB4.pdf MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K
auf Bestellung 50454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.75 EUR
10+0.5 EUR
100+0.31 EUR
1000+0.2 EUR
10000+0.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMP31D0UFB4-7B DMP31D0UFB4-7B Hersteller : Diodes Incorporated DMP31D0UFB4.pdf Description: MOSFET P-CH 30V 540MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 15 V
auf Bestellung 198307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
30+0.59 EUR
100+0.3 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.23 EUR
5000+0.21 EUR
Mindestbestellmenge: 19
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DMP31D0UFB4-7B Hersteller : DIODES INCORPORATED DMP31D0UFB4.pdf DMP31D0UFB4-7B SMD P channel transistors
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