DMP31D7LFBQ-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.06 EUR |
| 20000+ | 0.06 EUR |
| 30000+ | 0.06 EUR |
| 50000+ | 0.05 EUR |
| 70000+ | 0.05 EUR |
| 100000+ | 0.05 EUR |
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Technische Details DMP31D7LFBQ-7B Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X1-DFN1006, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 810mA (Ta), Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V, Power Dissipation (Max): 530mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: X1-DFN1006-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V, Qualification: AEC-Q101.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMP31D7LFBQ-7B | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V X1-DFN1006-3 T&R 10K |
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