DMP32D5SFB-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 400MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.12 EUR |
| 20000+ | 0.11 EUR |
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Technische Details DMP32D5SFB-7B Diodes Incorporated
Description: MOSFET P-CH 30V 400MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V.
Weitere Produktangebote DMP32D5SFB-7B nach Preis ab 0.11 EUR bis 0.54 EUR
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DMP32D5SFB-7B | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 400MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V |
auf Bestellung 87702 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP32D5SFB-7B | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30 |
auf Bestellung 12670 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP32D5SFB-7B | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 0.5A 3-Pin X1-DFN T/R |
Produkt ist nicht verfügbar |
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| DMP32D5SFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.4A Pulsed drain current: -1A Power dissipation: 1.2W Case: X1-DFN1006-3 Gate-source voltage: ±25V On-state resistance: 4Ω Mounting: SMD Gate charge: 4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP32D5SFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -400mA; Idm: -1A; 1.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.4A Pulsed drain current: -1A Power dissipation: 1.2W Case: X1-DFN1006-3 Gate-source voltage: ±25V On-state resistance: 4Ω Mounting: SMD Gate charge: 4nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |