DMP34M4SPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 995000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.76 EUR |
| 5000+ | 0.73 EUR |
| 12500+ | 0.69 EUR |
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Technische Details DMP34M4SPS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 135A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 135A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 1.5W, Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V.
Weitere Produktangebote DMP34M4SPS-13 nach Preis ab 0.81 EUR bis 2.73 EUR
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DMP34M4SPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 135A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 1.5W Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
auf Bestellung 997918 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP34M4SPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 12861 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP34M4SPS-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 21A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMP34M4SPS-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 21A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMP34M4SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W Type of transistor: P-MOSFET On-state resistance: 6mΩ Drain current: -17A Drain-source voltage: -30V Power dissipation: 3W Polarisation: unipolar Case: PowerDI5060-8 Kind of package: reel; tape Mounting: SMD Gate charge: 127nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -350A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP34M4SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W Type of transistor: P-MOSFET On-state resistance: 6mΩ Drain current: -17A Drain-source voltage: -30V Power dissipation: 3W Polarisation: unipolar Case: PowerDI5060-8 Kind of package: reel; tape Mounting: SMD Gate charge: 127nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -350A |
Produkt ist nicht verfügbar |