DMP4006SPSWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.4W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6855 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.41 EUR |
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Technische Details DMP4006SPSWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 9.8A, 10V, Power Dissipation (Max): 3.4W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6855 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP4006SPSWQ-13 nach Preis ab 1.42 EUR bis 3.15 EUR
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DMP4006SPSWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 9.8A, 10V Power Dissipation (Max): 3.4W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6855 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2882 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4006SPSWQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V 60 V PowerDI5060-8 T&R |
auf Bestellung 19337 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP4006SPSWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W Kind of package: reel; tape Gate charge: 162nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: -460A Drain-source voltage: -40V Drain current: -92A On-state resistance: 7.9mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.4W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP4006SPSWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W Kind of package: reel; tape Gate charge: 162nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: -460A Drain-source voltage: -40V Drain current: -92A On-state resistance: 7.9mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.4W Polarisation: unipolar |
Produkt ist nicht verfügbar |