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DMP4006SPSWQ-13

DMP4006SPSWQ-13 Diodes Incorporated

DMP4006SPSWQ-3195285.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V 60 V PowerDI5060-8 T&R
auf Bestellung 15262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.1 EUR
10+2.48 EUR
100+1.78 EUR
250+1.76 EUR
500+1.56 EUR
1000+1.45 EUR
2500+1.33 EUR
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Technische Details DMP4006SPSWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 9.8A, 10V, Power Dissipation (Max): 3.4W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6855 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMP4006SPSWQ-13 nach Preis ab 1.5 EUR bis 4.17 EUR

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Preis
DMP4006SPSWQ-13 DMP4006SPSWQ-13 Hersteller : Diodes Incorporated DMP4006SPSWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.4W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6855 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 802 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+2.69 EUR
100+1.85 EUR
500+1.5 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMP4006SPSWQ-13 DMP4006SPSWQ-13 Hersteller : Diodes Incorporated DMP4006SPSWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.4W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6855 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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DMP4006SPSWQ-13 Hersteller : DIODES INCORPORATED DMP4006SPSWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -460A
Drain current: -92A
Drain-source voltage: -40V
Gate charge: 162nC
On-state resistance: 7.9mΩ
Power dissipation: 3.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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