Produkte > DIODES INCORPORATED > DMP4006SPSWQ-13
DMP4006SPSWQ-13

DMP4006SPSWQ-13 Diodes Incorporated

DMP4006SPSWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.4W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6855 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.38 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMP4006SPSWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 9.8A, 10V, Power Dissipation (Max): 3.4W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6855 pF @ 20 V, Qualification: AEC-Q101.

Weitere Produktangebote DMP4006SPSWQ-13 nach Preis ab 1.4 EUR bis 3.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMP4006SPSWQ-13 DMP4006SPSWQ-13 Hersteller : Diodes Incorporated DMP4006SPSWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.4W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6855 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+2.55 EUR
100+2.03 EUR
500+1.72 EUR
1000+1.46 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMP4006SPSWQ-13 DMP4006SPSWQ-13 Hersteller : Diodes Incorporated DMP4006SPSWQ-3195285.pdf MOSFETs MOSFET BVDSS: 41V 60 V PowerDI5060-8 T&R
auf Bestellung 15613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.27 EUR
10+2.62 EUR
100+1.87 EUR
500+1.65 EUR
1000+1.53 EUR
2500+1.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMP4006SPSWQ-13 Hersteller : DIODES INCORPORATED DMP4006SPSWQ.pdf DMP4006SPSWQ-13 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH