DMP4010SK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CHANNEL 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP4010SK3-13 Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V, Power Dissipation (Max): 3.3W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP4010SK3-13 nach Preis ab 0.73 EUR bis 2.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMP4010SK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CHANNEL 40V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V Power Dissipation (Max): 3.3W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 27416 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| DMP4010SK3-13 | Hersteller : Diodes Inc |
P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
 |
DMP4010SK3-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V~40V TO252 T&R 2.5K |
Produkt ist nicht verfügbar |
|||||||||||||
| DMP4010SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252 Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -100A Drain current: -12A Drain-source voltage: -40V Gate charge: 91nC On-state resistance: 14mΩ Power dissipation: 3.3W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |