DMP4011SPSQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 40V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.7 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP4011SPSQ-13 Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP4011SPSQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
DMP4011SPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
| DMP4011SPSQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
Produkt ist nicht verfügbar |
||
| DMP4011SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI5060-8 Mounting: SMD Polarisation: unipolar Pulsed drain current: -300A Drain current: -9.4A Drain-source voltage: -40V Gate charge: 52nC On-state resistance: 14mΩ Power dissipation: 2.3W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |