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DMP4011SPSQ-13

DMP4011SPSQ-13 Diodes Incorporated

DMP4011SPSQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI5060
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 76A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
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Technische Details DMP4011SPSQ-13 Diodes Incorporated

Description: MOSFET P-CH 40V PWRDI5060, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 76A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

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DMP4011SPSQ-13 DMP4011SPSQ-13 Diodes Incorporated DMP4011SPSQ.pdf Description: MOSFET P-CH 40V PWRDI5060
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 76A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP4011SPSQ-13 Diodes Incorporated diodes_inc_diod-s-a0008533990-1-1761594.pdf MOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP4011SPSQ-13 DMP4011SPSQ.pdf
DMP4011SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI5060
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 76A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP4011SPSQ-13 diodes_inc_diod-s-a0008533990-1-1761594.pdf
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH