DMP4015SPSQ-13 Diodes Zetex
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.4 EUR |
| 5000+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP4015SPSQ-13 Diodes Zetex
Description: MOSFET P-CH 40V 8.5A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP4015SPSQ-13 nach Preis ab 0.38 EUR bis 2.71 EUR
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DMP4015SPSQ-13 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 40V 11A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4015SPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V 8.5A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 597500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4015SPSQ-13 | Hersteller : Diodes Incorporated |
MOSFETs 40V P-Ch Enh FET 25Vgss -100A 1.3W |
auf Bestellung 1334 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4015SPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V 8.5A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 599098 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4015SPSQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP4015SPSQ-13 - Leistungs-MOSFET, p-Kanal, 40 V, 8.5 A, 0.007 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 1891 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4015SPSQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP4015SPSQ-13 - Leistungs-MOSFET, p-Kanal, 40 V, 8.5 A, 0.007 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 1891 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4015SPSQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 11A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMP4015SPSQ-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 40V 11A Automotive 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMP4015SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.7A Power dissipation: 0.8W Case: PowerDI®5060-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Pulsed drain current: -100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP4015SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -100A; 0.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.7A Power dissipation: 0.8W Case: PowerDI®5060-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Pulsed drain current: -100A |
Produkt ist nicht verfügbar |