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DMP4025LSDQ-13

DMP4025LSDQ-13 DIODES INCORPORATED


Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -28A
Drain-source voltage: -40V
Drain current: -6.1A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMP4025LSDQ-13 DIODES INCORPORATED

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8, Kind of package: reel; tape, Gate charge: 33.7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Case: SO8, Pulsed drain current: -28A, Drain-source voltage: -40V, Drain current: -6.1A, On-state resistance: 45mΩ, Type of transistor: P-MOSFET, Mounting: SMD, Power dissipation: 2.14W, Polarisation: unipolar, Anzahl je Verpackung: 2500 Stücke.

Weitere Produktangebote DMP4025LSDQ-13

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DMP4025LSDQ-13 Hersteller : Diodes Incorporated DIODS19808_1-2541822.pdf MOSFET MOSFET BVDSS: 31V 40V SO-8 T&R 2.5K
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DMP4025LSDQ-13 DMP4025LSDQ-13 Hersteller : DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -28A
Drain-source voltage: -40V
Drain current: -6.1A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Polarisation: unipolar
Produkt ist nicht verfügbar