DMP4025SFGQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 40V 7.2A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.35 EUR |
| 9000+ | 0.32 EUR |
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Technische Details DMP4025SFGQ-13 Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V, Power Dissipation (Max): 810mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP4025SFGQ-13 nach Preis ab 0.41 EUR bis 1.14 EUR
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DMP4025SFGQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V 7.2A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 301645 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4025SFGQ-13 | Hersteller : Diodes Incorporated |
MOSFET 40V P-CH Enhance Mode |
auf Bestellung 2500 Stücke: Lieferzeit 474-478 Tag (e) |
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DMP4025SFGQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8 Application: automotive industry Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI®3333-8 Drain-source voltage: -40V Drain current: -5.4A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 0.81W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP4025SFGQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8 Application: automotive industry Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI®3333-8 Drain-source voltage: -40V Drain current: -5.4A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 0.81W Polarisation: unipolar |
Produkt ist nicht verfügbar |