DMP4051LK3Q-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 8.9W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 8.9W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
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Technische Details DMP4051LK3Q-13 DIODES INCORPORATED
Description: MOSFET BVDSS: 31V~40V TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V, Power Dissipation (Max): 2.14W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V.
Weitere Produktangebote DMP4051LK3Q-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMP4051LK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 12A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252, (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V |
Produkt ist nicht verfügbar |
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DMP4051LK3Q-13 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V TO252 T&R 2.5K |
Produkt ist nicht verfügbar |
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DMP4051LK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252 Kind of package: reel; tape Drain-source voltage: -40V Drain current: -8.4A On-state resistance: 85mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 8.9W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO252 |
Produkt ist nicht verfügbar |