DMP45H21DHE-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 450V 600MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.37 EUR |
| 5000+ | 0.35 EUR |
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Technische Details DMP45H21DHE-13 Diodes Incorporated
Description: MOSFET P-CH 450V 600MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V, Power Dissipation (Max): 12.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 450 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V.
Weitere Produktangebote DMP45H21DHE-13 nach Preis ab 0.41 EUR bis 0.97 EUR
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DMP45H21DHE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 450V 600MA SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V |
auf Bestellung 7479 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP45H21DHE-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 251V-500V |
auf Bestellung 529 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP45H21DHE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -450V Drain current: -400mA On-state resistance: 21Ω Type of transistor: P-MOSFET Power dissipation: 8W Polarisation: unipolar Gate charge: 4.2nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -1.2A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP45H21DHE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -450V Drain current: -400mA On-state resistance: 21Ω Type of transistor: P-MOSFET Power dissipation: 8W Polarisation: unipolar Gate charge: 4.2nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -1.2A |
Produkt ist nicht verfügbar |