DMP45H21DHE-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 600MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
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Technische Details DMP45H21DHE-13 Diodes Incorporated
Description: MOSFET P-CH 450V 600MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V, Power Dissipation (Max): 12.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 450 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V.
Weitere Produktangebote DMP45H21DHE-13 nach Preis ab 0.38 EUR bis 1.16 EUR
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DMP45H21DHE-13 | Diodes Incorporated |
Description: MOSFET P-CH 450V 600MA SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V |
auf Bestellung 3518 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP45H21DHE-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 251V-500V |
auf Bestellung 529 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMP45H21DHE-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 600MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
Description: MOSFET P-CH 450V 600MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
auf Bestellung 3518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.16 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |
| DMP45H21DHE-13 |
|
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 251V-500V
MOSFET MOSFET BVDSS: 251V-500V
auf Bestellung 529 Stücke:
Lieferzeit 10-14 Tag (e)