DMP45H4D9HJ3 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Drain current: -3A
Pulsed drain current: -22.4A
Power dissipation: 41W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.57 EUR |
| 124+ | 0.69 EUR |
| 137+ | 0.62 EUR |
| 150+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP45H4D9HJ3 DIODES INCORPORATED
Description: MOSFET P-CH 450V 4.6A TO251, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote DMP45H4D9HJ3 nach Preis ab 0.82 EUR bis 3.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMP45H4D9HJ3 | Diodes Incorporated |
Description: MOSFET P-CH 450V 4.6A TO251 Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP45H4D9HJ3 | Diodes Incorporated |
MOSFETs MOSFETBVDSS: 251V-500V |
auf Bestellung 346 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP45H4D9HJ3 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 4.6A TO251
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET P-CH 450V 4.6A TO251
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 10+ | 2.15 EUR |
| 25+ | 1.82 EUR |
| DMP45H4D9HJ3 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFETBVDSS: 251V-500V
MOSFETs MOSFETBVDSS: 251V-500V
auf Bestellung 346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.12 EUR |
| 10+ | 1.38 EUR |
| 75+ | 1.34 EUR |
| 525+ | 0.93 EUR |
| 1050+ | 0.82 EUR |