DMP45H4D9HJ3 Diodes Zetex
auf Bestellung 37050 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 450+ | 0.45 EUR |
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Technische Details DMP45H4D9HJ3 Diodes Zetex
Description: MOSFET P-CH 450V 4.6A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-251, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 450 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V.
Weitere Produktangebote DMP45H4D9HJ3 nach Preis ab 0.49 EUR bis 1.46 EUR
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| DMP45H4D9HJ3 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 450V 4.6A TO251Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-251 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 25 V |
auf Bestellung 37050 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP45H4D9HJ3 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 450V 4.6A 3-Pin(3+Tab) TO-251 Tube |
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DMP45H4D9HJ3 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 450V 4.6A 3-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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DMP45H4D9HJ3 | Hersteller : DIODES INCORPORATED |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Pulsed drain current: -22.4A Power dissipation: 41W Case: TO251 Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 13.7nC Drain current: -3A Anzahl je Verpackung: 1 Stücke |
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| DMP45H4D9HJ3 | Hersteller : Diodes Incorporated |
MOSFET MOSFETBVDSS: 251V-500V |
Produkt ist nicht verfügbar |
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DMP45H4D9HJ3 | Hersteller : DIODES INCORPORATED |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Pulsed drain current: -22.4A Power dissipation: 41W Case: TO251 Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 13.7nC Drain current: -3A |
Produkt ist nicht verfügbar |