DMP45H4D9HK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 450V 4.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.56 EUR |
| 5000+ | 0.55 EUR |
| 7500+ | 0.53 EUR |
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Technische Details DMP45H4D9HK3-13 Diodes Incorporated
Description: MOSFET P-CH 450V 4.7A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 450 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V.
Weitere Produktangebote DMP45H4D9HK3-13 nach Preis ab 0.60 EUR bis 2.25 EUR
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DMP45H4D9HK3-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFETBVDSS: 251V-500V |
auf Bestellung 39466 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP45H4D9HK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 450V 4.7A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V |
auf Bestellung 11547 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP45H4D9HK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Pulsed drain current: -12A Power dissipation: 41W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 13.7nC Drain current: -3A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP45H4D9HK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Pulsed drain current: -12A Power dissipation: 41W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 13.7nC Drain current: -3A |
Produkt ist nicht verfügbar |