DMP56D0UFB-7B Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 5+ | 0.6 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.21 EUR |
| 1000+ | 0.17 EUR |
| 2500+ | 0.15 EUR |
| 10000+ | 0.14 EUR |
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Technische Details DMP56D0UFB-7B Diodes Incorporated
Description: MOSFET P-CH 50V 200MA 3DFN, Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 50.54 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 425mW (Ta).
Weitere Produktangebote DMP56D0UFB-7B nach Preis ab 0.16 EUR bis 0.77 EUR
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DMP56D0UFB-7B | Diodes Incorporated |
 Description: MOSFET P-CH 50V 200MA 3DFNPower Dissipation (Max): 425mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 50.54 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA |
auf Bestellung 9971 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP56D0UFB-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 200MA 3DFN
Power Dissipation (Max): 425mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 50.54 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Description: MOSFET P-CH 50V 200MA 3DFN
Power Dissipation (Max): 425mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 50.54 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
auf Bestellung 9971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 38+ | 0.47 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |
| 5000+ | 0.16 EUR |