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DMP6018LPSQ-13

DMP6018LPSQ-13 Diodes Incorporated

DMP6018LPSQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+2.00 EUR
100+1.59 EUR
500+1.35 EUR
1000+1.14 EUR
Mindestbestellmenge: 8
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Technische Details DMP6018LPSQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V, Power Dissipation (Max): 2.6W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote DMP6018LPSQ-13 nach Preis ab 1.13 EUR bis 2.73 EUR

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DMP6018LPSQ-13 Hersteller : Diodes Incorporated DIOD_S_A0012955604_1-2513165.pdf MOSFET MOSFET BVDSS: 41V~60V PowerDI5060-8 T&R 2.5K
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.73 EUR
10+2.13 EUR
100+1.92 EUR
250+1.76 EUR
500+1.69 EUR
1000+1.43 EUR
2500+1.13 EUR
Mindestbestellmenge: 2
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DMP6018LPSQ-13 Hersteller : DIODES INCORPORATED DMP6018LPSQ.pdf DMP6018LPSQ-13 SMD P channel transistors
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DMP6018LPSQ-13 DMP6018LPSQ-13 Hersteller : Diodes Incorporated DMP6018LPSQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH