DMP6023LE-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 60V 7A/18.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18.2A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
auf Bestellung 52500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.73 EUR |
| 5000+ | 0.69 EUR |
| 12500+ | 0.64 EUR |
| 25000+ | 0.63 EUR |
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Technische Details DMP6023LE-13 Diodes Incorporated
Description: MOSFET P-CH 60V 7A/18.2A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18.2A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V.
Weitere Produktangebote DMP6023LE-13 nach Preis ab 0.73 EUR bis 1.92 EUR
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DMP6023LE-13 | Hersteller : Diodes Incorporated |
MOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF |
auf Bestellung 12197 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP6023LE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 7A/18.2A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18.2A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V |
auf Bestellung 54985 Stücke: Lieferzeit 21-28 Tag (e) |
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