DMP6023LEQ-13 Diodes Incorporated

Description: MOSFET P-CH 60V 7A SOT223 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18.2A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 17.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 277500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2500+ | 0.57 EUR |
5000+ | 0.55 EUR |
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Technische Details DMP6023LEQ-13 Diodes Incorporated
Description: MOSFET P-CH 60V 7A SOT223 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18.2A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), 17.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP6023LEQ-13 nach Preis ab 0.57 EUR bis 2.31 EUR
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DMP6023LEQ-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 1984 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6023LEQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18.2A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 17.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 277677 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6023LEQ-13 | Hersteller : DIODES INC. |
![]() tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 18.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 17.3W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 1321 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6023LEQ-13 | Hersteller : DIODES INC. |
![]() tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 18.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 17.3W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 1321 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6023LEQ-13 Produktcode: 194335
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DMP6023LEQ-13 | Hersteller : Diodes Inc |
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DMP6023LEQ-13 | Hersteller : Diodes Zetex |
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DMP6023LEQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -50A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP6023LEQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -50A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |