DMP6023LSS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 6.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
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Technische Details DMP6023LSS-13 Diodes Incorporated
Description: MOSFET P-CH 60V 6.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V.
Weitere Produktangebote DMP6023LSS-13 nach Preis ab 0.48 EUR bis 2.01 EUR
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DMP6023LSS-13 | Diodes Incorporated |
MOSFETs P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF |
auf Bestellung 11778 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6023LSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 6.6A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V |
auf Bestellung 5845 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP6023LSS-13 | Diodes INC. |
P-канальний ПТ, Udss, В = 60, Id = 6,6 А, Ciss, пФ @ Uds, В = 2569 @ 30, Rds = 25 мОм @ 5 A, 10 В, Ugs(th) = 3 В @ 250 мкА, Р, Вт = 1,2, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Очікується: 4025 Од. вим: штAnzahl je Verpackung: 3000 Stücke |
verfügbar 100 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| DMP6023LSS-13 |
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Hersteller: Diodes Incorporated
MOSFETs P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF
MOSFETs P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF
auf Bestellung 11778 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.48 EUR |
| DMP6023LSS-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 6.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Description: MOSFET P-CH 60V 6.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
auf Bestellung 5845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 14+ | 1.26 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |
| DMP6023LSS-13 |
![]() |
Hersteller: Diodes INC.
P-канальний ПТ, Udss, В = 60, Id = 6,6 А, Ciss, пФ @ Uds, В = 2569 @ 30, Rds = 25 мОм @ 5 A, 10 В, Ugs(th) = 3 В @ 250 мкА, Р, Вт = 1,2, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Очікується: 4025 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
P-канальний ПТ, Udss, В = 60, Id = 6,6 А, Ciss, пФ @ Uds, В = 2569 @ 30, Rds = 25 мОм @ 5 A, 10 В, Ugs(th) = 3 В @ 250 мкА, Р, Вт = 1,2, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Очікується: 4025 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 100 Stücke:


