DMP6050SFG-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.6 EUR |
| 6000+ | 0.56 EUR |
| 10000+ | 0.52 EUR |
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Technische Details DMP6050SFG-7 Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V.
Weitere Produktangebote DMP6050SFG-7 nach Preis ab 0.53 EUR bis 1.59 EUR
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DMP6050SFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V |
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Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W Mounting: SMD Case: PowerDI®3333-8 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -32A Drain-source voltage: -60V Drain current: -3.9A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar Anzahl je Verpackung: 2000 Stücke |
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Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W Mounting: SMD Case: PowerDI®3333-8 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -32A Drain-source voltage: -60V Drain current: -3.9A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar |
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