DMP610DLQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 186mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.084 EUR |
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Technische Details DMP610DLQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 186mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V, Power Dissipation (Max): 520mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP610DLQ-7 nach Preis ab 0.077 EUR bis 0.42 EUR
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DMP610DLQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 186mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 520mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3499 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP610DLQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V 60V SOT23 T&R 3K |
auf Bestellung 5453 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP610DLQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 60V 0.186A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
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DMP610DLQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.13A Pulsed drain current: -1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 560pC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |