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DMP610DLQ-7

DMP610DLQ-7 Diodes Incorporated

DMP610DLQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 186mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.086 EUR
6000+0.077 EUR
9000+0.06 EUR
15000+0.059 EUR
21000+0.056 EUR
30000+0.052 EUR
75000+0.051 EUR
Mindestbestellmenge: 3000
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Technische Details DMP610DLQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 186mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V, Power Dissipation (Max): 520mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote DMP610DLQ-7 nach Preis ab 0.062 EUR bis 0.52 EUR

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DMP610DLQ-7 DMP610DLQ-7 Hersteller : Diodes Incorporated DMP610DLQ.pdf Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 186mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 127578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
69+0.26 EUR
166+0.11 EUR
500+0.1 EUR
1000+0.096 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
DMP610DLQ-7 Hersteller : Diodes Incorporated DMP610DLQ-2997690.pdf MOSFET MOSFET BVDSS: 41V~60V SOT23 T&R 3K
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.52 EUR
10+0.36 EUR
100+0.23 EUR
1000+0.1 EUR
3000+0.086 EUR
9000+0.067 EUR
24000+0.062 EUR
Mindestbestellmenge: 6
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DMP610DLQ-7 Hersteller : Diodes Inc dmp610dlq.pdf MOSFET BVDSS: 41V60V SOT23 T&R 3K
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DMP610DLQ-7 Hersteller : DIODES INCORPORATED DMP610DLQ.pdf DMP610DLQ-7 SMD P channel transistors
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