auf Bestellung 6728 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 45+ | 1.17 EUR |
| 56+ | 0.93 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.46 EUR |
| 10000+ | 0.35 EUR |
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Technische Details DMP6110SFDF-13 Diodes Incorporated
Description: MOSFET P-CH 60V 4.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.97W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V.
Weitere Produktangebote DMP6110SFDF-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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DMP6110SFDF-13 | Hersteller : Diodes Inc |
 Trans MOSFET P-CH 60V 3.5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMP6110SFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Power dissipation: 1.3W Kind of package: reel; tape Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.13Ω Pulsed drain current: -20A Gate charge: 17.2nC Polarisation: unipolar Drain current: -3.4A Kind of channel: enhanced Drain-source voltage: -60V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP6110SFDF-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 4.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.97W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
Produkt ist nicht verfügbar |
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DMP6110SFDF-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 4.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.97W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
Produkt ist nicht verfügbar |
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| DMP6110SFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Power dissipation: 1.3W Kind of package: reel; tape Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.13Ω Pulsed drain current: -20A Gate charge: 17.2nC Polarisation: unipolar Drain current: -3.4A Kind of channel: enhanced Drain-source voltage: -60V |
Produkt ist nicht verfügbar |