DMP6110SFDFQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 60V 3.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
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Technische Details DMP6110SFDFQ-7 Diodes Incorporated
Description: MOSFET P-CH 60V 3.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V, Power Dissipation (Max): 760mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V.
Weitere Produktangebote DMP6110SFDFQ-7 nach Preis ab 0.42 EUR bis 1.31 EUR
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DMP6110SFDFQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 3.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SFDFQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
auf Bestellung 2228 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP6110SFDFQ-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 3.5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMP6110SFDFQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.3W Pulsed drain current: -20A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| DMP6110SFDFQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.3W Pulsed drain current: -20A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |