auf Bestellung 5404 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
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Technische Details DMP6110SFDFQ-7 Diodes Incorporated
Description: MOSFET P-CH 60V 3.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V, Power Dissipation (Max): 760mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP6110SFDFQ-7 nach Preis ab 0.40 EUR bis 1.21 EUR
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DMP6110SFDFQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 60V 3.5A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2529 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SFDFQ-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 3.5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMP6110SFDFQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP6110SFDFQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 3.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMP6110SFDFQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |