Produkte > DIODES INCORPORATED > DMP6110SSD-13
DMP6110SSD-13

DMP6110SSD-13 Diodes Incorporated


DMP6110SSD.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 7420 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.54 EUR
5000+ 0.52 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details DMP6110SSD-13 Diodes Incorporated

Description: MOSFET 2P-CH 60V 3.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V, Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.

Weitere Produktangebote DMP6110SSD-13 nach Preis ab 0.54 EUR bis 1.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMP6110SSD-13 DMP6110SSD-13 Hersteller : Diodes Incorporated DMP6110SSD.pdf Description: MOSFET 2P-CH 60V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 7938 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
21+ 1.24 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 19
DMP6110SSD-13 DMP6110SSD-13 Hersteller : Diodes Incorporated DIOD_S_A0002832714_1-2542040.pdf MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs
auf Bestellung 45623 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
36+1.45 EUR
43+ 1.22 EUR
100+ 0.92 EUR
500+ 0.75 EUR
1000+ 0.62 EUR
2500+ 0.54 EUR
Mindestbestellmenge: 36
DMP6110SSD-13 DMP6110SSD-13 Hersteller : Diodes Inc 605672348580338dmp6110ssd.pdf Trans MOSFET P-CH 60V 3.3A 8-Pin SO T/R
auf Bestellung 72500 Stücke:
Lieferzeit 14-21 Tag (e)
DMP6110SSD-13 DMP6110SSD-13 Hersteller : DIODES INCORPORATED DMP6110SSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.7A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP6110SSD-13 DMP6110SSD-13 Hersteller : DIODES INCORPORATED DMP6110SSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.7A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar