DMP6110SSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP6110SSD-13 Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.3A 8SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V, Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount.
Weitere Produktangebote DMP6110SSD-13 nach Preis ab 0.34 EUR bis 1.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMP6110SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 3.3A 8SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount |
auf Bestellung 3576 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMP6110SSD-13 | Diodes Incorporated |
MOSFETs 60V Dual P-Ch Enh FET 60Vds 20Vgs |
auf Bestellung 5180 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP6110SSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2P-CH 60V 3.3A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
auf Bestellung 3576 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 19+ | 0.94 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| DMP6110SSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 60V Dual P-Ch Enh FET 60Vds 20Vgs
MOSFETs 60V Dual P-Ch Enh FET 60Vds 20Vgs
auf Bestellung 5180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.36 EUR |
| 5000+ | 0.34 EUR |