DMP6110SSDQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CHANNEL 60V 7.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 80000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.6 EUR |
| 5000+ | 0.57 EUR |
| 12500+ | 0.53 EUR |
| 25000+ | 0.52 EUR |
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Technische Details DMP6110SSDQ-13 Diodes Incorporated
Description: MOSFET P-CHANNEL 60V 7.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V.
Weitere Produktangebote DMP6110SSDQ-13 nach Preis ab 0.58 EUR bis 1.59 EUR
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DMP6110SSDQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 12890 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP6110SSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CHANNEL 60V 7.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
auf Bestellung 82487 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMP6110SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.7A; Idm: -24A; 900mW; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 900mW Pulsed drain current: -24A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -2.7A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| DMP6110SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.7A; Idm: -24A; 900mW; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 900mW Pulsed drain current: -24A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -2.7A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |