auf Bestellung 2131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.8 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.39 EUR |
| 2500+ | 0.34 EUR |
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Technische Details DMP6110SSSQ-13 Diodes Incorporated
Description: MOSFET PCH 60V 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V.
Weitere Produktangebote DMP6110SSSQ-13 nach Preis ab 0.4 EUR bis 0.92 EUR
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DMP6110SSSQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET PCH 60V 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V |
auf Bestellung 2225 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SSSQ-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 4.5A Automotive 8-Pin SO T/R |
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| DMP6110SSSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 130mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: -3.6A Drain-source voltage: -60V Pulsed drain current: -19A Gate-source voltage: ±20V Type of transistor: P-MOSFET Gate charge: 19.4nC |
Produkt ist nicht verfügbar |
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DMP6110SSSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET PCH 60V 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V |
Produkt ist nicht verfügbar |
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| DMP6110SSSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 130mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: -3.6A Drain-source voltage: -60V Pulsed drain current: -19A Gate-source voltage: ±20V Type of transistor: P-MOSFET Gate charge: 19.4nC |
Produkt ist nicht verfügbar |