DMP6110SSSQ-13 Diodes Zetex
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.27 EUR |
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Technische Details DMP6110SSSQ-13 Diodes Zetex
Description: MOSFET PCH 60V 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP6110SSSQ-13 nach Preis ab 0.29 EUR bis 1.44 EUR
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DMP6110SSSQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET PCH 60V 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SSSQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 2783 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SSSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET PCH 60V 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 50350 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SSSQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP6110SSSQ-13 - Leistungs-MOSFET, p-Kanal, 60 V, 4.5 A, 0.086 ohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.086ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2420 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6110SSSQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP6110SSSQ-13 - Leistungs-MOSFET, p-Kanal, 60 V, 4.5 A, 0.086 ohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.086ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2420 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6110SSSQ-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 4.5A Automotive 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMP6110SSSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.6A Pulsed drain current: -19A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 19.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP6110SSSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.6A Pulsed drain current: -19A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 19.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |