DMP6110SVTQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 16+ | 1.1 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| 2000+ | 0.46 EUR |
| 5000+ | 0.42 EUR |
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Technische Details DMP6110SVTQ-13 Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TSOT-23-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP6110SVTQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP6110SVTQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V Qualification: AEC-Q101 |
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DMP6110SVTQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
Produkt ist nicht verfügbar |
