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DMP6110SVTQ-7

DMP6110SVTQ-7 Diodes Incorporated

DMP6110SVTQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
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Technische Details DMP6110SVTQ-7 Diodes Incorporated

Description: MOSFET P-CH 60V 7.3A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TSOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V.

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DMP6110SVTQ-7 DMP6110SVTQ-7 Hersteller : Diodes Incorporated DMP6110SVTQ.pdf Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 5770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
19+0.98 EUR
100+0.68 EUR
500+0.57 EUR
1000+0.48 EUR
Mindestbestellmenge: 16
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DMP6110SVTQ-7 DMP6110SVTQ-7 Hersteller : Diodes Incorporated DIOD_S_A0006455660_1-2542826.pdf MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.36 EUR
10+0.93 EUR
100+0.64 EUR
500+0.51 EUR
1000+0.47 EUR
3000+0.40 EUR
Mindestbestellmenge: 3
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DMP6110SVTQ-7 Hersteller : DIODES INCORPORATED DMP6110SVTQ.pdf DMP6110SVTQ-7 SMD P channel transistors
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.18 EUR
191+0.38 EUR
202+0.36 EUR
500+0.35 EUR
Mindestbestellmenge: 61
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DMP6110SVTQ-7 DMP6110SVTQ-7 Hersteller : Diodes Inc dmp6110svtq.pdf Trans MOSFET P-CH 60V 7.3A Automotive 6-Pin TSOT-26 T/R
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