DMP6180SK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 60V 14A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 984.7 pF @ 30 V
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.37 EUR |
| 5000+ | 0.35 EUR |
| 12500+ | 0.33 EUR |
| 25000+ | 0.32 EUR |
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Technische Details DMP6180SK3-13 Diodes Incorporated
Description: MOSFET P-CH 60V 14A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 984.7 pF @ 30 V.
Weitere Produktangebote DMP6180SK3-13 nach Preis ab 0.33 EUR bis 0.99 EUR
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DMP6180SK3-13 | Hersteller : Diodes Incorporated |
MOSFET 60V P-CH MOSFET |
auf Bestellung 30290 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6180SK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 14A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 984.7 pF @ 30 V |
auf Bestellung 58053 Stücke: Lieferzeit 10-14 Tag (e) |
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