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DMP6185SEQ-13

DMP6185SEQ-13 Diodes Incorporated


DMP6185SEQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 30 V
auf Bestellung 490000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.21 EUR
5000+0.19 EUR
7500+0.18 EUR
12500+0.17 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP6185SEQ-13 Diodes Incorporated

Description: MOSFET P-CHANNEL 60V 3A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 30 V.

Weitere Produktangebote DMP6185SEQ-13 nach Preis ab 0.20 EUR bis 0.80 EUR

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DMP6185SEQ-13 DMP6185SEQ-13 Hersteller : Diodes Incorporated DMP6185SEQ.pdf Description: MOSFET P-CHANNEL 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 30 V
auf Bestellung 491601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
36+0.49 EUR
100+0.33 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 24
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DMP6185SEQ-13 DMP6185SEQ-13 Hersteller : Diodes Incorporated DIOD_S_A0004145082_1-2542329.pdf MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.80 EUR
10+0.63 EUR
100+0.35 EUR
1000+0.24 EUR
2500+0.22 EUR
10000+0.20 EUR
Mindestbestellmenge: 4
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DMP6185SEQ-13 DMP6185SEQ-13 Hersteller : Diodes Inc 134dmp6185seq.pdf Trans MOSFET P-CH 60V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
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DMP6185SEQ-13 Hersteller : DIODES INCORPORATED DMP6185SEQ.pdf DMP6185SEQ-13 SMD P channel transistors
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