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DMP6185SEQ-13

DMP6185SEQ-13 Diodes Incorporated

DMP6185SEQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.34 EUR
Mindestbestellmenge: 2500
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Technische Details DMP6185SEQ-13 Diodes Incorporated

Description: MOSFET P-CHANNEL 60V 3A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 30 V.

Weitere Produktangebote DMP6185SEQ-13 nach Preis ab 0.32 EUR bis 1.25 EUR

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DMP6185SEQ-13 DMP6185SEQ-13 Hersteller : Diodes Incorporated DIOD_S_A0004145082_1-2542329.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 4995 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
44+1.19 EUR
55+ 0.95 EUR
100+ 0.65 EUR
500+ 0.49 EUR
1000+ 0.37 EUR
2500+ 0.32 EUR
Mindestbestellmenge: 44
DMP6185SEQ-13 DMP6185SEQ-13 Hersteller : Diodes Incorporated DMP6185SEQ.pdf Description: MOSFET P-CHANNEL 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 30 V
auf Bestellung 4845 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
27+ 0.98 EUR
100+ 0.58 EUR
500+ 0.54 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 21
DMP6185SEQ-13 DMP6185SEQ-13 Hersteller : Diodes Inc 134dmp6185seq.pdf Trans MOSFET P-CH 60V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
DMP6185SEQ-13 Hersteller : DIODES INCORPORATED DMP6185SEQ.pdf DMP6185SEQ-13 SMD P channel transistors
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