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DMP65H9D0HSS-13

DMP65H9D0HSS-13 Diodes Incorporated

DMP65H9D0HSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 9Ohm @ 300mA, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
auf Bestellung 3539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.97 EUR
2000+0.89 EUR
Mindestbestellmenge: 6
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Technische Details DMP65H9D0HSS-13 Diodes Incorporated

Description: MOSFET BVDSS: 501V~650V SO-8 T&R, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 9Ohm @ 300mA, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V.

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DMP65H9D0HSS-13 Hersteller : Diodes Inc dmp65h9d0hss.pdf P-Channel Enhancement Mode MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH
DMP65H9D0HSS-13 DMP65H9D0HSS-13 Hersteller : Diodes Incorporated DMP65H9D0HSS.pdf Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 9Ohm @ 300mA, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH