DMP68D0LFB-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V X2-DFN100
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 192mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 500mW
| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 65+ | 0.27 EUR |
| 104+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.099 EUR |
| 5000+ | 0.086 EUR |
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Technische Details DMP68D0LFB-7B Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V X2-DFN100, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 500mW, Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V, Current - Continuous Drain (Id) @ 25°C: 192mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP68D0LFB-7B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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DMP68D0LFB-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V X2-DFN100 Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Drain to Source Voltage (Vdss): 65 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 500mW Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Current - Continuous Drain (Id) @ 25°C: 192mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP68D0LFB-7B |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V X2-DFN100
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 500mW
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 192mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V X2-DFN100
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 500mW
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 192mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH