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DMP68D0LFB-7B

DMP68D0LFB-7B Diodes Incorporated

DMP68D0LFB.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V X2-DFN100
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 192mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V
auf Bestellung 6569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
65+0.27 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.099 EUR
5000+0.086 EUR
Mindestbestellmenge: 40
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Technische Details DMP68D0LFB-7B Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V X2-DFN100, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 192mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V, Power Dissipation (Max): 500mW, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V.

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DMP68D0LFB-7B Hersteller : Diodes Inc dmp68d0lfb.pdf 65V P-Channel Enhancement Mode MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH
DMP68D0LFB-7B DMP68D0LFB-7B Hersteller : Diodes Incorporated DMP68D0LFB.pdf Description: MOSFET BVDSS: 61V~100V X2-DFN100
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 192mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH