DMPH16M1UPSW-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 8V~24V PowerDI5060
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 1.95W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V
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Technische Details DMPH16M1UPSW-13 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V PowerDI5060, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V, Power Dissipation (Max): 1.95W, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V.