Technische Details DMPH2040UVTQ-7 Diodes Zetex
Description: MOSFET P-CH 20V 5.6/11.7A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH2040UVTQ-7 nach Preis ab 0.36 EUR bis 1.68 EUR
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DMPH2040UVTQ-7 | Diodes Incorporated |
 Description: MOSFET P-CH 20V 5.6/11.7A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH2040UVTQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 5.6/11.7A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH2040UVTQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V~24V TSOT26 T&R 3K |
auf Bestellung 405 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 5.6/11.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 5.6/11.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.37 EUR |
| DMPH2040UVTQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 5.6/11.7A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 5.6/11.7A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.09 EUR |
| 23+ | 0.93 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.42 EUR |
| DMPH2040UVTQ-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V TSOT26 T&R 3K
MOSFETs MOSFET BVDSS: 8V~24V TSOT26 T&R 3K
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.68 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.45 EUR |
| 3000+ | 0.36 EUR |