DMPH2040UVTQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 5.6/11.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.31 EUR |
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Technische Details DMPH2040UVTQ-7 Diodes Incorporated
Description: MOSFET P-CH 20V 5.6/11.7A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH2040UVTQ-7 nach Preis ab 0.35 EUR bis 0.92 EUR
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DMPH2040UVTQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 5.6/11.7A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH2040UVTQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26 Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Power dissipation: 1.5W Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -40A Polarisation: unipolar Mounting: SMD Case: TSOT26 Anzahl je Verpackung: 1 Stücke |
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DMPH2040UVTQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26 Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Power dissipation: 1.5W Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -40A Polarisation: unipolar Mounting: SMD Case: TSOT26 |
Produkt ist nicht verfügbar |