DMPH3010LPSQ-13 Diodes Zetex
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.6 EUR |
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Technische Details DMPH3010LPSQ-13 Diodes Zetex
Description: MOSFET P-CH 30V 60A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Power Dissipation (Max): 2.6W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6807 pF @ 15 V.
Weitere Produktangebote DMPH3010LPSQ-13
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Verfügbarkeit |
Preis |
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DMPH3010LPSQ-13 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 30V 15A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
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| DMPH3010LPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Pulsed drain current: -100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 139nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMPH3010LPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 60A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6807 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMPH3010LPSQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V PowerDI5060-8 T&R 2.5K |
Produkt ist nicht verfügbar |
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| DMPH3010LPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Pulsed drain current: -100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 139nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |