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DMPH33M8SPSW-13

DMPH33M8SPSW-13 Diodes Incorporated

DMPH33M8SPSW.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.29 EUR
Mindestbestellmenge: 2500
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Technische Details DMPH33M8SPSW-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V PowerDI506, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type Q), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V.

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DMPH33M8SPSW-13 Hersteller : Diodes Incorporated DMPH33M8SPSW-3240648.pdf MOSFET MOSFET BVDSS: 25V-30V PowerDI5060-8/SWP T&R 2.5K
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