DMPH4009SPSW-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI506, Power Dissipation (Max): 4.6W (Ta), 143W (Tc), Current - Continuous Drain (Id) @ 25°C: 83.4A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI5060-8 (Type UX), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).