![DMPH4015SK3Q-13 DMPH4015SK3Q-13](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2534/MFG_TO-252-3%2CD-Pak%2CSC-63.jpg)
DMPH4015SK3Q-13 Diodes Incorporated
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Description: MOSFET P-CH 40V 14A/45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 974890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.8 EUR |
5000+ | 0.76 EUR |
12500+ | 0.73 EUR |
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Technische Details DMPH4015SK3Q-13 Diodes Incorporated
Description: MOSFET P-CH 40V 14A/45A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH4015SK3Q-13 nach Preis ab 0.77 EUR bis 1.95 EUR
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DMPH4015SK3Q-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 977287 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH4015SK3Q-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 2465 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH4015SK3Q-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMPH4015SK3Q-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -10A Pulsed drain current: -100A Power dissipation: 3.3W Case: TO252 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMPH4015SK3Q-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -10A Pulsed drain current: -100A Power dissipation: 3.3W Case: TO252 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |