DMPH4023SK3Q-13 Diodes Zetex
| Anzahl | Preis |
|---|---|
| 2500+ | 0.52 EUR |
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Technische Details DMPH4023SK3Q-13 Diodes Zetex
Description: MOSFET P-CH 40V 50A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH4023SK3Q-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMPH4023SK3Q-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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DMPH4023SK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V 50A TO252 T&RPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252, (D-Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMPH4023SK3Q-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V TO252 T&R 2.5K |
Produkt ist nicht verfügbar |
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| DMPH4023SK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252 Mounting: SMD Polarisation: unipolar Pulsed drain current: -70A Drain current: -35A Drain-source voltage: -40V Gate charge: 18.7nC On-state resistance: 26mΩ Power dissipation: 3.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 |
Produkt ist nicht verfügbar |

