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DMPH4029LFGQ-7

DMPH4029LFGQ-7 Diodes Incorporated

diodes_inc_diod-s-a0008363683-1-1760437.pdf Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.16 EUR
10+1.00 EUR
100+0.69 EUR
500+0.58 EUR
1000+0.49 EUR
2000+0.44 EUR
4000+0.41 EUR
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Technische Details DMPH4029LFGQ-7 Diodes Incorporated

Description: MOSFET P-CH 40V 8A/22A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V, Qualification: AEC-Q101.

Weitere Produktangebote DMPH4029LFGQ-7 nach Preis ab 0.56 EUR bis 1.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMPH4029LFGQ-7 DMPH4029LFGQ-7 Hersteller : Diodes Incorporated DMPH4029LFGQ.pdf Description: MOSFET P-CH 40V 8A/22A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
17+1.10 EUR
100+0.72 EUR
500+0.56 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMPH4029LFGQ-7 DMPH4029LFGQ-7 Hersteller : Diodes Inc dmph4029lfgq.pdf Trans MOSFET P-CH 40V 8A Automotive AEC-Q101 8-Pin PowerDI EP T/R
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DMPH4029LFGQ-7 Hersteller : DIODES INCORPORATED DMPH4029LFGQ.pdf DMPH4029LFGQ-7 SMD P channel transistors
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DMPH4029LFGQ-7 DMPH4029LFGQ-7 Hersteller : Diodes Incorporated DMPH4029LFGQ.pdf Description: MOSFET P-CH 40V 8A/22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH