DMPH4029LFGQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 40V 8A/22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 584000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.44 EUR |
| 6000+ | 0.41 EUR |
| 10000+ | 0.38 EUR |
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Technische Details DMPH4029LFGQ-7 Diodes Incorporated
Description: MOSFET P-CH 40V 8A/22A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH4029LFGQ-7 nach Preis ab 0.41 EUR bis 1.16 EUR
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DMPH4029LFGQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH4029LFGQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V 8A/22A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 585821 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH4029LFGQ-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 40V 8A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMPH4029LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Kind of package: reel; tape Drain-source voltage: -40V Drain current: -6.7A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 2.8W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -88A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMPH4029LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Kind of package: reel; tape Drain-source voltage: -40V Drain current: -6.7A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 2.8W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -88A Mounting: SMD Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |