DMPH6050SK3Q-13 Diodes Zetex
auf Bestellung 2119 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 391+ | 0.37 EUR |
| 397+ | 0.35 EUR |
| 404+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.3 EUR |
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Technische Details DMPH6050SK3Q-13 Diodes Zetex
Description: MOSFET P-CH 60V 7.2A/23.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMPH6050SK3Q-13 nach Preis ab 0.27 EUR bis 1.95 EUR
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DMPH6050SK3Q-13 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 60V 7.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2119 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH6050SK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 7.2A/23.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH6050SK3Q-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60 |
auf Bestellung 9288 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH6050SK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 7.2A/23.6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 6214 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH6050SK3Q-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMPH6050SK3Q-13 - Leistungs-MOSFET, p-Kanal, 60 V, 23.6 A, 0.05 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 23.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.9W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.05ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH6050SK3Q-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMPH6050SK3Q-13 - Leistungs-MOSFET, p-Kanal, 60 V, 23.6 A, 0.05 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 23.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.9W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.05ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH6050SK3Q-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 7.2A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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DMPH6050SK3Q-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 60V 7.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMPH6050SK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6A Pulsed drain current: -40A Power dissipation: 3.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 25nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMPH6050SK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6A Pulsed drain current: -40A Power dissipation: 3.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 25nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |