DMPH6050SK3Q-13 Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 391+ | 0.44 EUR |
| 397+ | 0.43 EUR |
| 404+ | 0.42 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMPH6050SK3Q-13 Diodes Zetex
Description: MOSFET P-CH 60V 7.2A/23.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH6050SK3Q-13 nach Preis ab 0.33 EUR bis 2.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMPH6050SK3Q-13 | Diodes Zetex |
 Trans MOSFET P-CH 60V 7.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2119 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
DMPH6050SK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.2A/23.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMPH6050SK3Q-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60 |
auf Bestellung 8279 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMPH6050SK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.2A/23.6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 6214 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMPH6050SK3Q-13 | DIODES INC. |
Description: DIODES INC. - DMPH6050SK3Q-13 - Leistungs-MOSFET, p-Kanal, 60 V, 23.6 A, 0.05 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 23.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.9W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.05ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
DMPH6050SK3Q-13 | DIODES INC. |
Description: DIODES INC. - DMPH6050SK3Q-13 - Leistungs-MOSFET, p-Kanal, 60 V, 23.6 A, 0.05 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 23.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.9W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.05ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
|
| DMPH6050SK3Q-13 |
|
Hersteller: Diodes Zetex
Trans MOSFET P-CH 60V 7.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 7.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2119 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 379+ | 0.46 EUR |
| 385+ | 0.44 EUR |
| 391+ | 0.42 EUR |
| 397+ | 0.39 EUR |
| 404+ | 0.37 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.33 EUR |
| DMPH6050SK3Q-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.62 EUR |
| DMPH6050SK3Q-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60
MOSFETs MOSFET BVDSS: 41V-60
auf Bestellung 8279 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 0.57 EUR |
| DMPH6050SK3Q-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 6214 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.32 EUR |
| 19+ | 1.14 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.68 EUR |
| DMPH6050SK3Q-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMPH6050SK3Q-13 - Leistungs-MOSFET, p-Kanal, 60 V, 23.6 A, 0.05 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 23.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.9W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.05ohm
SVHC: Lead (27-Jun-2024)
Description: DIODES INC. - DMPH6050SK3Q-13 - Leistungs-MOSFET, p-Kanal, 60 V, 23.6 A, 0.05 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 23.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.9W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.05ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 92+ | 2.73 EUR |
| DMPH6050SK3Q-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMPH6050SK3Q-13 - Leistungs-MOSFET, p-Kanal, 60 V, 23.6 A, 0.05 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 23.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.9W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.05ohm
SVHC: Lead (27-Jun-2024)
Description: DIODES INC. - DMPH6050SK3Q-13 - Leistungs-MOSFET, p-Kanal, 60 V, 23.6 A, 0.05 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 23.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.9W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.05ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.73 EUR |