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DMPH6050SPDQ-13

DMPH6050SPDQ-13 Diodes Incorporated


DMPH6050SPDQ-3214647.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.18 EUR
10+1.53 EUR
100+1.13 EUR
500+0.94 EUR
1000+0.82 EUR
2500+0.73 EUR
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Technische Details DMPH6050SPDQ-13 Diodes Incorporated

Description: MOSFET 2P-CH 26A POWERDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V, Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMPH6050SPDQ-13 nach Preis ab 0.86 EUR bis 2.8 EUR

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Preis
DMPH6050SPDQ-13 DMPH6050SPDQ-13 Hersteller : Diodes Incorporated DMPH6050SPDQ.pdf Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
10+1.77 EUR
100+1.16 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMPH6050SPDQ-13 DMPH6050SPDQ-13 Hersteller : Diodes Zetex dmph6050spdq.pdf Trans MOSFET P-CH 60V 6.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R
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DMPH6050SPDQ-13 DMPH6050SPDQ-13 Hersteller : Diodes Inc 3777dmph6050spdq.pdf Trans MOSFET P-CH 60V 6.3A Automotive 8-Pin PowerDI EP T/R
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DMPH6050SPDQ-13 Hersteller : DIODES INCORPORATED DMPH6050SPDQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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DMPH6050SPDQ-13 DMPH6050SPDQ-13 Hersteller : Diodes Incorporated DMPH6050SPDQ.pdf Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMPH6050SPDQ-13 Hersteller : DIODES INCORPORATED DMPH6050SPDQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH