| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.19 EUR |
| 10+ | 2.03 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.99 EUR |
| 2500+ | 0.87 EUR |
| 5000+ | 0.83 EUR |
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Technische Details DMPH6050SPDQ-13 Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V, Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMPH6050SPDQ-13 nach Preis ab 1.02 EUR bis 3.33 EUR
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DMPH6050SPDQ-13 | Diodes Incorporated |
 Description: MOSFET 2P-CH 26A POWERDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 2365 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMPH6050SPDQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.02 EUR |