auf Bestellung 4275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.18 EUR |
| 10+ | 1.53 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.82 EUR |
| 2500+ | 0.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMPH6050SPDQ-13 Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V, Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMPH6050SPDQ-13 nach Preis ab 0.86 EUR bis 2.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMPH6050SPDQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2P-CH 26A POWERDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2365 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
DMPH6050SPDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 60V 6.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
DMPH6050SPDQ-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 6.3A Automotive 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| DMPH6050SPDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Pulsed drain current: -40A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 30.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
DMPH6050SPDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 26A POWERDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||
| DMPH6050SPDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Pulsed drain current: -40A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 30.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |