DMPH6050SSDQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details DMPH6050SSDQ-13 Diodes Incorporated
Description: MOSFET 2P-CH 60V 5.2A 8SOIC, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMPH6050SSDQ-13 nach Preis ab 0.49 EUR bis 2.22 EUR
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DMPH6050SSDQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 8911 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH6050SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 5.2A 8SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount |
auf Bestellung 2555 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMPH6050SSDQ-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 8911 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.06 EUR |
| 10+ | 1.3 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.51 EUR |
| 5000+ | 0.49 EUR |
| DMPH6050SSDQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
auf Bestellung 2555 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.22 EUR |
| 13+ | 1.4 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.63 EUR |